FDP5N50NZ / fdpf5n50nz n-channel unifet tm ii mosfet ?2010 fairchild semiconductor corporation FDP5N50NZ / fdpf5n50nz rev. c0 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FDP5N50NZ fdpf5n50nz unit v dss drain to source voltage 500 v v gss gate to source voltage 25 v i d drain current -continuous (t c = 25 o c) 4.5 4.5* a -continuous (t c = 100 o c) 2.7 2.7* i dm drain current - pulsed (note 1) 18 18* a e as single pulsed avalanche energy (note 2) 160 mj i ar avalanche current (note 1) 4.5 a e ar repetitive avalanche energy (note 1) 7.8 mj dv/dt peak diode recovery dv/dt (note 3) 10 v/ns p d power dissipation (t c = 25 o c) 78 30 w - derate above 25 o c 0.62 0.24 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDP5N50NZ fdpf5n50nz unit r ? jc thermal resistance, junction to case , max. 1.6 4.1 o c/w r ? cs thermal resistance, case to sink typ. - - r ? ja thermal resistance, junction to ambient, max. 62.5 62.5 FDP5N50NZ / fdpf5n50nz n-channel unifet tm ii mosfet 500 v, 4.5 a, 1.5 ? features ? r ds(on) = 1.38 ? (typ.) @ v gs = 10 v, i d = 2.25 a ? low gate charge (typ. 9 nc) ? low crss (ty p. 4 pf) ? 100% avalanche tested ? improved dv/dt capability ? esd imoroved capability ?rohs compliant description unifet tm ii mosfet is fairchild semiconductor ? s high voltage mosfet family based on advanced planar stripe and dmos technology. this advanced mosfet family has the smallest on- state resistanc e among the planar mosfet, and also provides superior switching performance and higher avalanche energy strength. in addition, internal gate-source esd diode allows unifet ii mosfet to withstand over 2kv hbm surge stress. this device family is suitable for switching power converter applications such as power factor correction (pfc), flat panel display (fpd) tv power, atx and electronic lamp ballasts. g s d g s d to-220f *drain current limited by maximum junction temperature ? lcd/led tv ? lighting ? uninterruptible power supply ? ac-dc power supply applications to- 220 april 2013 g d s g d s
2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDP5N50NZ FDP5N50NZ to-220 - - 50 fdpf5n50nz fdpf5n50nz to-220f - - 50 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 ? a, v gs = 0v, t c = 25 o c 500 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 ? a, referenced to 25 o c-0.5-v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 1 ? a v ds = 400v, v gs = 0v,t c = 125 o c- - 10 i gss gate to body leakage current v gs = 25v, v ds = 0v - - ? 10 ? a v gs(th) gate threshold voltage v gs = v ds , i d = 250 ? a3 . 0-5 . 0v r ds(on) static drain to source on resistance v gs = 10v, i d = 2.25a - ? 1.38 1.5 ? g fs forward transconductance v ds = 20v, i d = 2.25a (note 4) -3.54- s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 330 440 pf c oss output capacitance - 50 70 pf c rss reverse transfer capacitance - 4 8 pf q g(tot) total gate charge at 10v v ds = 400v i d = 4.5a v gs = 10v (note 4,5) - 9 12 nc q gs gate to source gate charge - 2 - nc q gd gate to drain ?miller? charge - 4 - nc t d(on) turn-on delay time v dd = 250v, i d = 4.5a v gs = 10v, r gen = 25 ? (note 4,5) -1235ns t r turn-on rise time - 22 55 ns t d(off) turn-off delay time - 28 65 ns t f turn-off fall time - 21 50 ns i s maximum continuous drain to source diode forward current - - 4.5 a i sm maximum pulsed drain to source diode forward current - - 18 a v sd drain to source diode forward voltage v gs = 0v, i sd = 4.5a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 4.5a di f /dt = 100a/ ? s (note 4) - 210 - ns q rr reverse recovery charge - 1.1 - ? c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 15.8mh, i as = 4.5a, v dd = 50v, r g = 25 ? , starting t j = 25 ?c 3. i sd ?? 2.8a, di/dt ? 200a/ ? s, v dd ? bv dss , starting t j = 25 ?c 4. pulse test: pulse width ? 300 ? s, duty cycle ? 2.0% 5. essentially independent of operating temperature typical characteristics FDP5N50NZ / fdpf5n50nz n-channel unifet tm ii mosfet ?2010 fairchild semiconductor corporation fdp 5n50nz / fdpf5n50nz rev . c0 www.fairchildsemi.com
3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 20 0.1 1 10 *notes: 1. 250 ? s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d , drain current[a] v ds , drain-source voltage[v] 2468 0.1 1 10 20 -55 o c 150 o c *notes: 1 . v ds = 20v 2 . 250 ? s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0246810 1 2 3 4 *notes: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0.40.60.81.01.21.4 1 10 20 *notes: 1. v gs = 0v 2. 250 ? s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 30 0 100 200 300 400 500 600 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *notes: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0246810 0 2 4 6 8 10 *notes: i d = 4.5a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc] FDP5N50NZ / fdpf5n50nz n-channel unifet tm ii mosfet ?2010 fairchild semiconductor corporation c0
4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum safe operating area vs. case temperature-FDP5N50NZ vs. case temperature-fdpf5n50nz figure 11. maximum drain current -100 -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 ? a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 2.25a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 1 10 100 1000 0.01 0.1 1 10 30 100 ? s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1 . t c = 25 o c 2 . t j = 150 o c 3 . single pulse dc 1 10 100 1000 0.01 0.1 1 10 30 100us 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1 . t c = 25 o c 2 . t j = 150 o c 3 . single pulse dc 25 50 75 100 125 150 0 1 2 3 4 5 i d , drain current [a] t c , case temperature [ o c] FDP5N50NZ / fdpf5n50nz n-channel unifet tm ii mosfet ?2010 fairchild semiconductor corporation fdp 5n50nz / fdpf5n50nz rev . c0 www.fairchildsemi.com
5 typical performanc e characteristics (continued) figur e 12. transient thermal response curve-FDP5N50NZ figure 13. transient thermal response curve-fdpf5n50nz 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1 . z ? jc (t) = 1.6 o c/w max. 2 . duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z ? jc (t) 0.5 single pulse thermal response [z ? jc ] rectangular pulse duration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.01 0.1 1 5 0.01 0.1 0.2 0.05 0.02 *notes: 1 . z ? jc (t) = 4.1 o c/w max. 2 . duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z ? jc (t) 0.5 single pulse thermal response [z ? jc ] rectangular pulse duration [sec] t 1 p dm t 2 FDP5N50NZ / fdpf5n50nz n-channel unifet tm ii mosfet ?2010 fairchild semiconductor corporation fdp 5n50nz / fdpf5n50nz rev . c0 www.fairchildsemi.com
6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms FDP5N50NZ / fdpf5n50nz n-channel unifet tm ii mosfet ?2010 fairchild semiconductor corporation fdp 5n50nz / fdpf5n50nz rev . c0 www.fairchildsemi.com
7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g s am e t ype as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d r iv e r ) i sd ( dut ) v ds ( dut ) v dd b ody d iode forw ard v oltage d rop v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g s am e t ype as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d r iv e r ) i sd ( dut ) v ds ( dut ) v dd b ody d iode forw ard v oltage d rop v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period -------------------------- FDP5N50NZ / fdpf5n50nz n-channel unifet tm ii mosfet ?2010 fairchild semiconductor corporation fdp 5n50nz / fdpf5n50nz rev . c0 www.fairchildsemi.com
dimensions in millimeters mechanical dimensions to-220b03 FDP5N50NZ / fdpf5n50nz n-channel unifet tm ii c0 c0 8 c 0
mechanical dimensions dimensions in millimeters to-220m03 FDP5N50NZ / fdpf5n50nz n-channel unifet tm ii 9 c 0
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FDP5N50NZ / fdpf5n50nz n-channel unifet tm ii 10 c 0
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